Palladium Enhanced Etching of n-type Silicon in Hydrofluoric Acid Solution
نویسندگان
چکیده
منابع مشابه
Etching with Hydrofluoric Acid
Photoresists, wafers, plating solutions, etchants and solvents ... Phone: +49 731 977343 0 www.microchemicals.eu [email protected] Etching of SiO2, Quartz, and Glasses with HF Hydrofluoric acid is the only etchant which attacks amorphous SiO2, quartz, or glasses at significant high etch rate. However, HF is not only a strong corrosive, but also highly toxic towards higher concentrations: ...
متن کاملEtching with Hydrofluoric Acid
Photoresists, developers, remover, adhesion promoters, etchants, and solvents ... Phone: +49 731 36080-409 www.microchemicals.eu e-Mail: [email protected] Etching of SiO2, Quartz, and Glasses with HF Hydrofluoric acid is the only etchant which attacks amorphous SiO2, quartz, or glasses at significant high etch rate. However, HF is not only a strong corrosive, but also highly toxic towards...
متن کاملStructural and optical properties of n- type porous silicon– effect of etching time
Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...
متن کاملEffect of hydrofluoric acid concentration and etching time on the surface roughness of CAD/CAM ceramics
Introduction: Dental ceramics are considered as materials that can restore the appearance of natural teeth. Etching the inner surface of a ceramic restoration with hydrofluoric acid (HF) followed by using a silane coupling agent is a well-known and recommended method to increase the bond strength. The aim of etching on ceramic structure is to enhance the surface roughness (Ra) and energy and to...
متن کاملstructural and optical properties of n- type porous silicon– effect of etching time
porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...
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ژورنال
عنوان ژورنال: Electrochemistry
سال: 2008
ISSN: 2186-2451,1344-3542
DOI: 10.5796/electrochemistry.76.144